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| NSS35200MR6T1G 35 V, 5 A, Low VCE(sat) PNP Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. http://onsemi.com 35 VOLTS 5.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 100 mW COLLECTOR 1, 2, 5, 6 3 BASE 4 EMITTER * This is a Pb-Free Device MAXIMUM RATINGS (TA = 25C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector Current - Peak Electrostatic Discharge Symbol VCEO VCBO VEBO IC ICM ESD Max -35 -55 -5.0 -2.0 -5.0 Unit Vdc Vdc Vdc Adc A 6 5 4 3 1 2 HBM Class 3 MM Class C TSOP-6 CASE 318G STYLE 6 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. DEVICE MARKING VS8M VS8 = Specific Device Code M = Date Code ORDERING INFORMATION Device NSS35200MR6T1G Package Shipping TSOP-6 3000/Tape & Reel (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2005 1 June, 2005 - Rev. 0 Publication Order Number: NSS35200MR6/D NSS35200MR6T1G THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Lead #1 Total Device Dissipation (Single Pulse < 10 sec.) Junction and Storage Temperature Range 1. FR-4 @ Minimum Pad. 2. FR-4 @ 1.0 X 1.0 inch Pad. 3. Refer to Figure 9. Symbol PD (Note 1) Max 625 5.0 RqJA (Note 1) PD (Note 2) 200 1.0 8.0 RqJA (Note 2) RqJL PDsingle (Notes 2 & 3) TJ, Tstg 120 80 1.75 -55 to +150 Unit mW mW/C C/W W mW/C C/W C/W W C http://onsemi.com 2 NSS35200MR6T1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typical Max Unit OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = -10 mAdc, IB = 0) Collector -Base Breakdown Voltage (IC = -0.1 mAdc, IE = 0) Emitter -Base Breakdown Voltage (IE = -0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = -35 Vdc, IE = 0) Collector-Emitter Cutoff Current (VCES = -35 Vdc) Emitter Cutoff Current (VEB = -4.0 Vdc) V(BR)CEO -35 V(BR)CBO -55 V(BR)EBO -5.0 ICBO - ICES - IEBO - -0.01 -0.1 -0.03 -0.1 mAdc -0.03 -0.1 mAdc -7.0 - mAdc -65 - Vdc -45 - Vdc Vdc ON CHARACTERISTICS DC Current Gain (Note 4) (IC = -1.0 A, VCE = -1.5 V) (IC = -1.5 A, VCE = -1.5 V) (IC = -2.0 A, VCE = -3.0 V) Collector -Emitter Saturation Voltage (Note 4) (IC = -0.8 A, IB = -0.008 A) (IC = -1.2 A, IB = -0.012 A) (IC = -2.0 A, IB = -0.02 A) Base -Emitter Saturation Voltage (Note 4) (IC = -1.2 A, IB = -0.012 A) Base -Emitter Turn-on Voltage (Note 4) (IC = -2.0 A, VCE = -3.0 V) Cutoff Frequency (IC = -100 mA, VCE = -5.0 V, f = 100 MHz) Input Capacitance (VEB = -0.5 V, f = 1.0 MHz) Output Capacitance (VCB = -3.0 V, f = 1.0 MHz) Turn-on Time (VCC = -10 V, IB1 = -100 mA, IC = -1 A, RL = 3 W) Turn-off Time (VCC = -10 V, IB1 = IB2 = -100 mA, IC = 1 A, RL = 3 W) 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%. hFE 100 100 100 VCE(sat) - - - VBE(sat) - VBE(on) - fT 100 Cibo Cobo ton toff - - - - - 600 85 35 225 - 650 100 - - pF pF nS nS -0.81 -0.875 MHz -0.68 -0.85 V -0.125 -0.175 -0.260 -0.15 -0.20 -0.31 V 200 200 200 - 400 - V http://onsemi.com 3 NSS35200MR6T1G VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (VOLTS) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (VOLTS) 0.25 IC/IB = 50 0.20 100C 0.15 25C 0.10 0.05 0 -55C 0.1 IC/IB = 100 50 10 0.01 0.001 0.001 0.01 0.1 1.0 0.001 0.01 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 1. Collector Emitter Saturation Voltage versus Collector Current Figure 2. Collector Emitter Saturation Voltage versus Collector Current hFE , DC CURRENT GAIN (NORMALIZED) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 VBE(sat) , BASE EMITTER SATURATION VOLTAGE (VOLTS) 100C 1.0 0.8 0.6 0.4 0.2 0 -55C 25C 100C 25C -55C 0.001 0.01 0.1 1.0 0.001 0.01 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. DC Current Gain versus Collector Current V BE(on) , BASE EMITTER TURN-ON VOLTAGE (VOLTS) 1.1 C ibo , INPUT CAPACITANCE (pF) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.001 0.01 0.1 1.0 100C 25C -55C 750 700 650 600 550 500 450 400 350 300 0 Figure 4. Base Emitter Saturation Voltage versus Collector Current 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 IC, COLLECTOR CURRENT (AMPS) VEB, EMITTER BASE VOLTAGE (VOLTS) Figure 5. Base Emitter Turn-On Voltage versus Collector Current Figure 6. Input Capacitance http://onsemi.com 4 NSS35200MR6T1G 225 Cobo, OUTPUT CAPACITANCE (pF) IC , COLLECTOR CURRENT (AMPS) 200 175 150 125 100 75 50 25 0 0 5.0 10 15 20 25 30 35 0.01 0.1 10 1 s 100 ms 10 ms 1 ms 100 ms 1.0 DC 0.1 SINGLE PULSE AT Tamb = 25C 1.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 VCB, COLLECTOR BASE VOLTAGE (VOLTS) Figure 7. Output Capacitance Figure 8. Safe Operating Area r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE 1.0 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 t, TIME (sec) 1.0 10 100 1000 0.001 Figure 9. Normalized Thermal Response http://onsemi.com 5 NSS35200MR6T1G PACKAGE DIMENSIONS TSOP-6 CASE 318G-02 ISSUE P D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10 - INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 - 6 5 1 2 4 3 HE E b e q 0.05 (0.002) A1 A L c DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0 MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0 MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10 STYLE 6: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 NSS35200MR6/D |
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